EMB08N03A Datasheet - Excelliance MOS

EMB08N03A MOSFET

EMB08N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 8mΩ ID 55A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 55 ID TC = 100 °C 38 IDM 150 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH, ID=40A, RG=2.

EMB08N03A Datasheet (229.46 KB)

EMB08N03A Datasheet Preview — Preview of EMB08N03A PDF

Datasheet Details

Part number:

EMB08N03A

Manufacturer:

Excelliance MOS

File Size:

229.46 KB

Description:

Mosfet.

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EMB08N03A MOSFET Excelliance MOS

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