EMB08N06H Datasheet - Excelliance MOS

EMB08N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB08N06H N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=60A, RG=25Ω L = 0.05.

EMB08N06H Datasheet (212.50 KB)

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Datasheet Details

Part number:

EMB08N06H

Manufacturer:

Excelliance MOS

File Size:

212.50 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB08N06H N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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