EMB08N06VS Datasheet - Excelliance MOS

EMB08N06VS N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 8.0mΩ ID 40A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current1 TC = 25 °C TA = 25 °C ID Pulsed Drain Current2 TA= 70 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, IAS=20A, RG=25Ω EAS Repetiti.

EMB08N06VS Datasheet (852.05 KB)

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Datasheet Details

Part number:

EMB08N06VS

Manufacturer:

Excelliance MOS

File Size:

852.05 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB08N06VS N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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