EMB08N06CS Datasheet - Excelliance MOS

EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 8mΩ ID 60A G UIS, Rg 100% Tested S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1,3 TC = 25 °C 60 ID TC = 100 °C 35 IDM 170 Avalanche Current IAS 60 Avalanche Energy L = 0.1mH, ID=60A, R.

EMB08N06CS Datasheet (314.16 KB)

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Datasheet Details

Part number:

EMB08N06CS

Manufacturer:

Excelliance MOS

File Size:

314.16 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMB08N06CS N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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