EMB60A06G Datasheet - Excelliance MOS

EMB60A06G MOSFET

EMB60A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS Repetitive Avalanche Energy2 .

EMB60A06G Datasheet (192.04 KB)