EMB60C06G Datasheet - Excelliance MOS

EMB60C06G MOSFET

N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 60V ‐60V RDSON (MAX.) 60mΩ 90mΩ ID 5A ‐4A EMB60C06G Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj.

EMB60C06G Datasheet (213.82 KB)