EMB60A06S Datasheet - Excelliance MOS

EMB60A06S MOSFET

EMB60A06S Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 5A UIS, 100% Tested Pb‐Free Lead Plating ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy L = 0.1mH, ID=7.5A, RG=25Ω EAS Repetitive Avalanche Energy2 L = 0.05mH EAR .

EMB60A06S Datasheet (194.58 KB)