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EMB60A06V Datasheet - Excelliance MOS

EMB60A06V MOSFET

EMB60A06V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 60mΩ ID 6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 6 ID TA = 100 °C 4.3 IDM 24 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EA.

EMB60A06V-ExcellianceMOS.pdf