FDB031N08 - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB031N08
Manufacturer	Fairchild Semiconductor
File Size	572.14 KB
Description	N-Channel MOSFET
Datasheet	FDB031N08_FairchildSemiconductor.pdf

FDB031N08 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol VDSS VGSS ID Drain to Source

Features

RDS(on) = 2.4 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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Published: Oct 14, 2009 |