FDB035AN06A0 Datasheet, Mosfet, Fairchild Semiconductor

FDB035AN06A0 Features

• Mosfet
• r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A
• Qg(tot) = 95nC (Typ.), VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Sin

PDF File Details

Part number:

FDB035AN06A0

Manufacturer:

Fairchild Semiconductor

File Size:

236.39kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

FDB035AN06A0 Application

• Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC c

TAGS

FDB035AN06A0

Fairchild Semiconductor

📁 Related Datasheet

FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDB035AN06A0 ·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High.

FDB035AN06A0 - N-Channel MOSFET (ON Semiconductor)
FDB035AN06A0 — N-Channel PowerTrench® MOSFET FDB035AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ Features • RDS(on) = 3.2 mΩ ( Typ.) @ VG.

FDB035N10A - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A Description This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH proc.

FDB035N10A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features • RDS(on) = 3.0 mΩ .

FDB031N08 - N-Channel MOSFET (Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB039N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features • RDS(on) = 2.95mΩ ( Typ.) @ VG.

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Ty.

FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.