FDB039N06 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDB039N06
Manufacturer	Fairchild Semiconductor
File Size	574.79 KB
Description	N-Channel MOSFET
Datasheet	FDB039N06 Datasheet
Additional preview pages of the FDB039N06 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC to DC convertors / Synchronous Rectification D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol www.DataSheet4U.com VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Drain Current

Features

RDS(on) = 2.95mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant General.

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Published: Oct 14, 2009 |