FDB075N15A
Fairchild Semiconductor
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N-channel mosfet. This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize th
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FDB075N15A - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanch.
FDB075N15A - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH)
150 V, 130 A, 7.5 mW
FDP075N15A, FDB075N15A
Description This N−Channel MOSFET is produced using onsemi advanced
POWER.
FDB075N15A-F085 - N-Channel MOSFET
(ON Semiconductor)
FDB075N15A-F085 N-Channel Power Trench® MOSFET
FDB075N15A-F085
N-Channel Power Trench® MOSFET
150V, 110A, 7.5mΩ
D
D
Features
Typ rDS(on) = 5.5mΩ.
FDB070AN06A0 - MOSFET
(Fairchild Semiconductor)
FDB070AN06A0 — N-Channel PowerTrench® MOSFET
October 2013
FDB070AN06A0
N-Channel PowerTrench® MOSFET
60 V, 80 A, 7 mΩ
Features
Applications
• RDS.
FDB016N04AL7 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET
June 2014
FDB016N04AL7
N-Channel PowerTrench® MOSFET
40 V, 306 A, 1.6 mW
Features
• RDS(on) = 1.16 mW (T.
FDB024N04AL7 - MOSFET
(Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET
June 2014
FDB024N04AL7
N-Channel PowerTrench® MOSFET
40 V, 219 A, 2.4 mΩ
Features
• RDS(on) = 2.0 mΩ (Ty.
FDB024N06 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET
FDB024N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.4 mΩ
November 2013
Features
• RDS(on) = 1.8 mΩ (Ty.
FDB024N08BL7 - MOSFET
(Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET
June 2014
FDB024N08BL7
N-Channel PowerTrench® MOSFET
80 V, 229 A, 2.4 mΩ
Features
• RDS(on) = 1.7 mΩ ( T.
FDB029N06 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB029N06 — N-Channel PowerTrench® MOSFET
FDB029N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.1 mΩ
November 2013
Features
• RDS(on) = 2.4 mΩ (Ty.
FDB031N08 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET
FDB031N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.1 mΩ
November 2013
Features
• RDS(on) = 2.4 mΩ (Ty.