FDB088N08 Datasheet (Fairchild Semiconductor)

FDB088N08, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Batte

FDB088N08 Features

* RDS(on) = 7.3 mΩ (Typ.) @ VGS = 10 V, ID = 75 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* 100% Internal RG Screening for Easy Paralleling Ope