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FDB088N08 N-Channel MOSFET

FDB088N08 Description

FDB088N08 * N-Channel PowerTrench® MOSFET FDB088N08 N-Channel PowerTrench® MOSFET 75 V, 85 A, 8.8 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDB088N08 Features

* RDS(on) = 7.3 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability
* 100% Internal RG Screening for Easy Paralleling Ope

FDB088N08 Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID Parameter Drain to Source Volta

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N-Channel MOSFET Fairchild Semiconductor
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