FDB5686 Datasheet, Mosfet, Fairchild Semiconductor

FDB5686 Features

• Mosfet • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical DC electrical parameters specified at evevated temperature. • Rugged internal source-drain diode c

PDF File Details

Part number:

FDB5686

Manufacturer:

Fairchild Semiconductor

File Size:

440.93kb

Download:

📄 Datasheet

Description:

60v n-channel mosfet. 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. • Critical D

TAGS

FDB5686

Fairchild Semiconductor

📁 Related Datasheet

FDB5680 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features • 40 A, 60 V. RDS(ON) = 0.020 Ω @ VGS = 1.

FDB5645 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifical.

FDB5690 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FDP5690/FDB5690 July 2000 FDP5690/FDB5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specificall.

FDB52N20 - MOSFET (Fairchild Semiconductor)
FDB52N20 — N-Channel UniFETTM MOSFET FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features • RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A .

FDB5800 - N-Channel MOSFET (Fairchild Semiconductor)
FDB5800 — N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November 2013 Features • RDS.

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Ty.

FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.

FDB029N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB029N06 — N-Channel PowerTrench® MOSFET FDB029N06 N-Channel PowerTrench® MOSFET 60 V, 193 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.