FDB5800 Datasheet - Fairchild Semiconductor

FDB5800, N-Channel MOSFET

FDB5800 * N-Channel Logic Level PowerTrench® MOSFET FDB5800 N-Channel Logic Level PowerTrench® MOSFET 60 V, 80 A, 6 mΩ November 2013 Featur

Features

* RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A
* High Performance Trench Technology for Extermly Low RDS(on)
* Low Gate Charge
* High Power and Current Handing Capability

Applications

* Power tools
* Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC < 102oC, VGS = 10 V) - Con

FDB5800-FairchildSemiconductor.pdf