FDB5800 - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDB5800
Manufacturer	Fairchild Semiconductor
File Size	663.66 KB
Description	N-Channel MOSFET
Datasheet	FDB5800-FairchildSemiconductor.pdf

FDB5800 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Power tools Motor drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC < 102oC,

Features

RDS(on) = 4.6 mΩ (Typ. ), VGS = 10 V, ID = 80 A.
High Performance Trench Technology for Extermly Low RDS(on).
Low Gate Charge.
High Power and Current Handing Capability.
RoHs Compliant.

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Published: Aug 13, 2015 |