Datasheet Details
Part number:
FDB6670AS
Manufacturer:
Fairchild Semiconductor
File Size:
95.95 KB
Description:
30V N-Channel PowerTrench SyncFET
Features
* 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (28nC typical)
* High performance trench technology for extremely low RDS(ON) and fast switching
* High power and current
FDB6670AS-FairchildSemiconductor.pdf
FDB6670AS, 30V N-Channel PowerTrench SyncFET
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
The FDP6670AS includes an integrated Schottky diode using Fairchild’s
FDB6670AS Distributor
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