FDB6670AS Datasheet - Fairchild Semiconductor

FDB6670AS 30V N-Channel PowerTrench SyncFET

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s .

FDB6670AS Features

* 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V

* Includes SyncFET Schottky body diode

* Low gate charge (28nC typical)

* High performance trench technology for extremely low RDS(ON) and fast switching

* High power and current

FDB6670AS-FairchildSemiconductor.pdf