FDB6670S Datasheet - Fairchild Semiconductor

FDB6670S N-Channel MOSFET

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild’s m.

FDB6670S Features

* 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V

* Includes SyncFET Schottky body diode

* Low gate charge (23nC typical)

* High performance trench technology for extremely low RDS(ON) and fast switching

* High power and current handl

FDB6670S_FairchildSemiconductor.pdf