FDB6676S - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDB6676S
Manufacturer	Fairchild ↗ Semiconductor
File Size	116.99 KB
Description	N-Channel MOSFET
Datasheet	FDB6676S_FairchildSemiconductor.pdf

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V.
Includes SyncFET Schottky body diode.
Low gate charge (40nC typical).
High performance trench technology for extremely low RDS(ON) and fast switching.
High power and current handling capability.
D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Curre.

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Published: Mar 30, 2005 |