FDB6676S Datasheet (Fairchild Semiconductor)

FDB6676S, N-Channel MOSFET

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

The FDP/B6676S includes an integrated Schottky diode using Fairchild’s

FDB6676S Features

* 38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V

* Includes SyncFET Schottky body diode

* Low gate charge (40nC typical)

* High performance trench technology for extremely low RDS(ON) and fast switching

* High power and current handl