FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications * Load Switch * Synchronous Rectifier *
FDC8601 Features
* Shielded Gate MOSFET Technology
* Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A
* Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surf
