FDC8601 - N-Channel Shielded Gate PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC8601
Manufacturer	Fairchild Semiconductor
File Size	194.94 KB
Description	N-Channel Shielded Gate PowerTrench MOSFET
Datasheet	FDC8601-FairchildSemiconductor.pdf

FDC8601 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. Load Switch Synchronous Rectifier Primary Switch S D D D G D Pin 1 D D 6 1 D SuperSOTTM -6 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage G

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A.
Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

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Published: Aug 3, 2014 |