FDC8601 Datasheet - Fairchild Semiconductor

FDC8601 N-Channel Shielded Gate PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Applications * Load Switch * Synchronous Rectifier *.

FDC8601 Features

* Shielded Gate MOSFET Technology

* Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surf

FDC8601-FairchildSemiconductor.pdf