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FDC86244

N-Channel Power Trench MOSFET

FDC86244 Features

* Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A

* Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surface mount package

* Fast switching

FDC86244 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications

* Load Switch

* Synchronous Rectifier

* Primary Switch S D D D G D Pin 1 D -6 D 6 1 D Sup.

FDC86244 Datasheet (225.17 KB)

Preview of FDC86244 PDF

Datasheet Details

Part number:

FDC86244

Manufacturer:

Fairchild Semiconductor

File Size:

225.17 KB

Description:

N-channel power trench mosfet.

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TAGS

FDC86244 N-Channel Power Trench MOSFET Fairchild Semiconductor

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