FDC86244 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDC86244 N-Channel Power Trench® MOSFET November 2010 FDC86244 N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching perfor.

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Datasheet Specifications

Part number: FDC86244
Manufacturer: Fairchild Semiconductor
File Size: 225.17 KB
Datasheet: FDC86244-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A
* Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package
* Fast switching

Applications

* Load Switch
* Synchronous Rectifier
* Primary Switch S D D D G D Pin 1 D -6 D 6 1 D SuperSOTTM 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -

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FDC86244 N-Channel Power Trench MOSFET Fairchild Semiconductor

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