FDD050N03B N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resist.

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Datasheet Specifications

Part number: FDD050N03B
Manufacturer: Fairchild Semiconductor
File Size: 435.12 KB
Datasheet: FDD050N03B-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* RDS(on) = 3.7 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge, QG = 33 nC( Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Con

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FDD050N03B N-Channel PowerTrench MOSFET Fairchild Semiconductor

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