FDD050N03B Datasheet - Fairchild Semiconductor

FDD050N03B, N-Channel PowerTrench MOSFET

FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ

Features

* RDS(on) = 3.7 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge, QG = 33 nC( Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PAK (TO-252) G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter FDD050N03B VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Con

FDD050N03B-FairchildSemiconductor.pdf