FDD3860 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDD3860
Manufacturer	Fairchild Semiconductor
File Size	388.40 KB
Description	MOSFET
Datasheet	FDD3860 Datasheet
Additional preview pages of the FDD3860 datasheet.

Product details

Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. DC-AC Conversion Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source V

Features

Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A.
High Performance Trench Technology for Extremely Low rDS(on).
100% UIL Tested.
RoHS Compliant September 2016 General.

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Published: Jan 11, 2017 |