FDD86113LZ - N-Channel MOSFET
* Shielded Gate MOSFET Technology * Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A * Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A * HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s ad
