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FDD86113LZ Datasheet - Fairchild Semiconductor

FDD86113LZ - N-Channel MOSFET

* Shielded Gate MOSFET Technology * Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A * Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A * HBM ESD protection level > 6 kV typical (Note 4) This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s ad

FDD86113LZ-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDD86113LZ

Manufacturer:

Fairchild Semiconductor

File Size:

374.47 KB

Description:

N-channel mosfet.

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