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FDFME2P823ZT Datasheet - Fairchild Semiconductor

FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode

* Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A * Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A * Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID = -1.5 A * Max rDS(on) = 530 mΩ at VGS = -1.5 V, ID = -1.2 A * Low profile: 0.55 mm maximum in the new package M.

FDFME2P823ZT_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDFME2P823ZT

Manufacturer:

Fairchild Semiconductor

File Size:

254.85 KB

Description:

Integrated p-channel powertrench mosfet and schottky diode.

FDFME2P823ZT Distributor

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FDFME2P823ZT FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor