FDFME2P823ZT Datasheet, Diode, Fairchild Semiconductor

✔ FDFME2P823ZT Features

General Description
Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A
Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A
Max rDS(on) = 331 mΩ at VGS = -1.8 V, ID =

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FDFME2P823ZT

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📄 Datasheet

Description:

Integrated p-channel powertrench mosfet and schottky diode. * Max rDS(on) = 142 mΩ at VGS = -4.5 V, ID = -2.3 A * Max rDS(on) = 213 mΩ at VGS = -2.5 V, ID = -1.8 A * Max rDS(on) = 331 mΩ at VG

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FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor