FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFME2P823ZT Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFME2P823ZT July 2010 Integrated P-Channel PowerTrench® MOSFET and Schott.
Max rDS(on) = 142 mΩ at VGS = -4. Max rDS(on) = 213 mΩ at VGS = -2. Max rDS(on) = 331 m.

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Datasheet Specifications

Part number: FDFME2P823ZT
Manufacturer: Fairchild Semiconductor
File Size: 254.85 KB
Datasheet: FDFME2P823ZT_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

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FDFME2P823ZT Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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