Datasheet4U Logo Datasheet4U.com

FDFME3N311ZT - N-Channel MOSFET and Schottky Diode

📥 Download Datasheet

Preview of FDFME3N311ZT PDF
datasheet Preview Page 2 datasheet Preview Page 3

FDFME3N311ZT Product details

Description

Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.It

Features

📁 FDFME3N311ZT Similar Datasheet

  • FDFMA2P029Z-F106 - P-Channel MOSFET (ON Semiconductor)
  • FDF60BA50 - (FDF60BA50/60) DIODE MODULE F.R.D (SanRex Corporation)
  • FDF60BA60 - (FDF60BA50/60) DIODE MODULE F.R.D (SanRex Corporation)
  • FDFS2P106A - P-Channel MOSFET and Schottky Diode (ON Semiconductor)
  • FDFS6N548 - N-Channel MOSFET and Schottky Diode (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor
  • FDFME2P823ZT - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFM2N111 - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
  • FDFM2P110 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2P029Z - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
  • FDFMA2P853 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Published: |