FDFME3N311ZT Datasheet - Fairchild Semiconductor

FDFME3N311ZT N-Channel MOSFET and Schottky Diode

* Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A * Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A * Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin * Free from halogenated compounds and antimony oxides * HBM ESD protection level > 1600.

FDFME3N311ZT_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDFME3N311ZT

Manufacturer:

Fairchild Semiconductor

File Size:

285.81 KB

Description:

N-channel mosfet and schottky diode.

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FDFME3N311ZT FDFME3N311ZT N-Channel MOSFET and Schottky Diode Fairchild Semiconductor