FDFME3N311ZT Datasheet, Diode, Fairchild Semiconductor

✔ FDFME3N311ZT Features

General Description
Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
Low profile: 0.55 mm maximum in the new packag

✔ FDFME3N311ZT Application

It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independentl

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FDFME3N311ZT

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Fairchild Semiconductor

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📄 Datasheet

Description:

N-channel mosfet and schottky diode. * Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A * Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A * Low profile: 0.55 mm maximum i

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FDFME3N311ZT N-Channel MOSFET and Schottky Diode Fairchild Semiconductor