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FDFME3N311ZT N-Channel MOSFET and Schottky Diode

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Description

FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode FDFME3N311ZT July 2010 Integrated N-Channel PowerTrench® MOSFET and Schott.
Max rDS(on) = 299 mΩ at VGS = 4. Max rDS(on) = 410 mΩ at VGS = 2. Low profile: 0.

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Datasheet Specifications

Part number
FDFME3N311ZT
Manufacturer
Fairchild Semiconductor
File Size
285.81 KB
Datasheet
FDFME3N311ZT_FairchildSemiconductor.pdf
Description
N-Channel MOSFET and Schottky Diode

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