FDG1024NZ N-Channel MOSFET

Fairchild Semiconductor

Description

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ .
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technolo.

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Datasheet Specifications

Part number: FDG1024NZ
Manufacturer: Fairchild Semiconductor
File Size: 337.70 KB
Datasheet: FDG1024NZ_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
* HBM ESD protection level >2 kV (Note 3)
* Very low

Applications

* as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. G2 D1 S2 S1 1 G1 2 D2 S1 G1 D2 3 6 D1 5 G2 4 S2 SC70-6 www. DataSheet4U. c

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FDG1024NZ N-Channel MOSFET Fairchild Semiconductor

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