FDG1024NZ - N-Channel MOSFET
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage ap
FDG1024NZ Features
* Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
* HBM ESD protection level >2 kV (Note 3)
* Very low
