FDG1024NZ Datasheet - Fairchild Semiconductor

FDG1024NZ N-Channel MOSFET

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ap.

FDG1024NZ Features

* Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A

* Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A

* Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A

* Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A

* HBM ESD protection level >2 kV (Note 3)

* Very low

FDG1024NZ Datasheet (337.70 KB)