Datasheet Details
| Part number | FDG410NZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 295.61 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDG410NZ Datasheet
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| Part number | FDG410NZ |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 295.61 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDG410NZ Datasheet
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Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Fast switching speed This N-Channel MOSFET has been designed specifically to improve
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