FDG8842CZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDG8842CZ
Manufacturer	Fairchild Semiconductor
File Size	455.63 KB
Description	MOSFET
Datasheet	FDG8842CZ Datasheet
Additional preview pages of the FDG8842CZ datasheet.

Product details

Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

Q1: N-Channel.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel.
Max rDS(on) = 1.1Ω at VGS =.
4.5V, ID =.
0.41A.
Max rDS(on) = 1.5Ω at VGS =.
2.7V, ID =.
0.25A.
Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th).

📁 Similar Datasheet

FDG03 - Photodiodes (Thorlabs)
FDG05 - Photodiodes (Thorlabs)
FDG1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
FDG122032A - Monochrome LCD (Fiducia)
FDG122032C - Monochrome LCD (Fiducia)
FDG122032D - Monochrome LCD (Fiducia)
FDG122032N - Monochrome LCD (Fiducia)
FDG122032P - Monochrome LCD (Fiducia)

Other Datasheets by Fairchild Semiconductor

FDG8850NZ - MOSFET
FDG311N - N-Channel 2.5V Specified PowerTrench MOSFET
FDG312P - P-Channel 2.5V Specified PowerTrench MOSFET
FDG313N - N-Channel Digital FET
FDG314P - Digital FET/ P-Channel
FDG315N - N-Channel Logic Level PowerTrench MOSFET

Published: Jan 11, 2017 |