FDG8842CZ Datasheet - Fairchild Semiconductor

FDG8842CZ MOSFET

These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage ap.

FDG8842CZ Features

* Q1: N-Channel

* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A

* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel

* Max rDS(on) = 1.1Ω at VGS =

* 4.5V, ID =

* 0.41A

* Max rDS(on) = 1.5Ω at VGS =

* 2.7V, ID =

* 0.25A

* Very l

FDG8842CZ Datasheet (455.63 KB)

FDG8842CZ Datasheet Preview — Preview of FDG8842CZ PDF

Datasheet Details

Part number:

FDG8842CZ

Manufacturer:

Fairchild Semiconductor

File Size:

455.63 KB

Description:

Mosfet.

📁 Related Datasheet

FDG8842CZ MOSFET (ON Semiconductor)

FDG8850NZ MOSFET (Fairchild Semiconductor)

FDG8850NZ Dual N-Channel MOSFET (ON Semiconductor)

FDG03 Photodiodes (Thorlabs)

FDG05 Photodiodes (Thorlabs)

FDG1024NZ Dual N-Channel MOSFET (ON Semiconductor)

FDG1024NZ N-Channel MOSFET (Fairchild Semiconductor)

FDG1024NZ Dual N-Channel MOSFET (VBsemi)

TAGS

FDG8842CZ MOSFET Fairchild Semiconductor

FDG8842CZ Distributor