FDG8842CZ Datasheet, Mosfet, Fairchild Semiconductor

FDG8842CZ Features

• Mosfet Q1: N-Channel
• Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
• Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
• Max rDS(on) = 1.1Ω at VGS =
   

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Part number:

FDG8842CZ

Manufacturer:

Fairchild Semiconductor

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455.63kb

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📄 Datasheet

Description:

Mosfet. These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell densi

FDG8842CZ Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital F

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FDG8842CZ

Fairchild Semiconductor

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