FDG8850NZ MOSFET

Fairchild Semiconductor

Description

FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω .
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technolo.

📥 Download Datasheet

FDG8850NZ Datasheet Preview — Preview of FDG8850NZ PDF

Datasheet Specifications

Part number: FDG8850NZ
Manufacturer: Fairchild Semiconductor
File Size: 327.66 KB
Datasheet: FDG8850NZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
* Very low level gate drive requirements allowing operation in 3V circuits(VGS(th)

Applications

* as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. G2 D1 S2 SC70-6 Pin 1 D2 G1 S1 Q1 S1 G1 Q2 D2 D1 G2 S2

FDG8850NZ Distributors

📁 Related Datasheet

FDG03 FDG05 FDG1024NZ FDG122032A FDG122032C FDG122032D

📌 All Tags

FDG8850NZ MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDG8850NZ-like datasheet