FDG8850NZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDG8850NZ
Manufacturer	Fairchild Semiconductor
File Size	327.66 KB
Description	MOSFET
Datasheet	FDG8850NZ Datasheet
Additional preview pages of the FDG8850NZ datasheet.

Product details

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A.
Very low level gate drive requirements allowing operation in 3V circuits(VGS(th).

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Published: Jan 11, 2017 |