Part number:
FDG8850NZ
Manufacturer:
Fairchild Semiconductor
File Size:
327.66 KB
Description:
Mosfet.
FDG8850NZ Datasheet (327.66 KB)
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
* Very low level gate drive requirements allowing operation in 3V circuits(VGS(th)
FDG8850NZ Datasheet (327.66 KB)
FDG8850NZ
Fairchild Semiconductor
327.66 KB
Mosfet.
📁 Related Datasheet
FDG8850NZ - Dual N-Channel MOSFET
(ON Semiconductor)
.
FDG8842CZ - MOSFET
(Fairchild Semiconductor)
FDG8842CZ Complementary PowerTrench® MOSFET
FDG8842CZ
Complementary PowerTrench® MOSFET
April 2007
tm
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Featu.
FDG8842CZ - MOSFET
(ON Semiconductor)
FDG8842CZ Complementary PowerTrench® MOSFET
FDG8842CZ
Complementary PowerTrench® MOSFET
Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω
Features
Q1: N-Chan.
FDG03 - Photodiodes
(Thorlabs)
Product Specification Sheet
Photodiodes
CAUTION
ELECTROSTATIC SENSITIVE DEVICE DO NOT HANDLE EXCEPT
WITH AN ESD WRIST STRAP AT A STATIC-FREE WORKSTA.
FDG05 - Photodiodes
(Thorlabs)
435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366
Ph. 973-579-7227 FAX 973-300-3600
FDG05 Ge Photodiode
--Large Active Area --Low Capacitance
Ele.
FDG1024NZ - Dual N-Channel MOSFET
(ON Semiconductor)
MOSFET – Dual N-Channel, POWERTRENCH®
20 V, 1.2 A, 175 mW
FDG1024NZ
Description This dual N−Channel logic level enhancement mode field effect
transist.
FDG1024NZ - N-Channel MOSFET
(Fairchild Semiconductor)
FDG1024NZ Dual N-Channel Power Trench® MOSFET
August 2009
FDG1024NZ
Dual N-Channel PowerTrench® MOSFET
20 V, 1.2 A, 175 mΩ
Features
Max rDS(on) = .
FDG1024NZ - Dual N-Channel MOSFET
(VBsemi)
FDG1024NZ
.VBsemi.
FDG1024NZ Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.086 at VGS = 4.5 V 0.110 at VGS = 2..
