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FDMC3612 Datasheet - Fairchild Semiconductor

FDMC3612 N-Channel Power Trench MOSFET

* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A * Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A * Low Profile - 1 mm max in Power 33 * 100% UIL Tested * RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® .

FDMC3612-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDMC3612

Manufacturer:

Fairchild Semiconductor

File Size:

289.60 KB

Description:

N-channel power trench mosfet.

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FDMC3612 FDMC3612 N-Channel Power Trench MOSFET Fairchild Semiconductor

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