FDMC3612 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC3612 N-Channel PowerTrench® MOSFET FDMC3612 N-Channel Power Trench® MOSFET 100 V, 12 A, 110 mΩ February 2012 .
Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3. Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3. Low Profile - 1 mm max in.

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Datasheet Specifications

Part number: FDMC3612
Manufacturer: Fairchild Semiconductor
File Size: 289.60 KB
Datasheet: FDMC3612-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Applications

* DC - DC Conversion
* PSE Switch Top 8765 Bottom DDD D 1 234 GS S S MLP 3.3x3.3 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Con

FDMC3612 Distributors

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FDMC3612 N-Channel Power Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMC3612-like datasheet