FDMC3612 - N-Channel Power Trench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMC3612
Manufacturer	Fairchild Semiconductor
File Size	289.60 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC3612-FairchildSemiconductor.pdf

FDMC3612 Product details

Description

Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.Applications DC - DC Conversion PSE Switch Top 8765

Features

General.

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Published: Nov 13, 2016 |