FDMC8321L Datasheet - Fairchild Semiconductor

N-Channel Power Trench MOSFET

FDMC8321L Features

* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A

* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A

* Advanced Package and Silicon combination for low rDS(on) and hign efficiency

* Next Generation enhanced body diode technology, engineered for soft recovery

* 100

FDMC8321L General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode re.

FDMC8321L Datasheet (228.30 KB)

FDMC8321L Datasheet Preview — Preview of FDMC8321L PDF

Datasheet Details

Part number:

FDMC8321L

Manufacturer:

Fairchild Semiconductor

File Size:

228.30 KB

Description:

N-channel power trench mosfet.

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FDMC8321L N-Channel Power Trench MOSFET Fairchild Semiconductor

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FDMC8321L Features

FDMC8321L General Description

Datasheet Details

File Size:

Description:

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