FDMC8321L Datasheet - Fairchild Semiconductor

FDMC8321L N-Channel Power Trench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or convertional switching PWM contollers. It has been optimized for low gate charge, low rDS(on), fast switching speed body diode re.

FDMC8321L Features

* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A

* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A

* Advanced Package and Silicon combination for low rDS(on) and hign efficiency

* Next Generation enhanced body diode technology, engineered for soft recovery

* 100

FDMC8321L Datasheet (228.30 KB)