FDMC8321L N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8321L N-Channel PowerTrench® MOSFET February 2013 FDMC8321L N-Channel Power Trench® MOSFET 40 V, 49 A, 2.5 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Datasheet Specifications

Part number: FDMC8321L
Manufacturer: Fairchild Semiconductor
File Size: 228.30 KB
Datasheet: FDMC8321L-FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A
* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A
* Advanced Package and Silicon combination for low rDS(on) and hign efficiency
* Next Generation enhanced body diode technology, engineered for soft recovery
* 100

Applications

* Synchronous rectifier
* Load switch/Orring
* Motor switch Top Bottom S Pin 1 S S G S S D D D D D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain

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FDMC8321L N-Channel Power Trench MOSFET Fairchild Semiconductor

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