FDME910PZT Datasheet - Fairchild Semiconductor

FDME910PZT MOSFET

FDME910PZT Features

* Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A

* Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A

* Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A

* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin

* HBM ESD protection level > 2 kV typical

Datasheet Details

FDME910PZT

Fairchild Semiconductor

181.48 KB

Mosfet.

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FDME910PZT FDME910PZT MOSFET Fairchild Semiconductor

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