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FDME910PZT - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDME910PZT
Manufacturer	Fairchild ↗ Semiconductor
File Size	181.48 KB
Description	MOSFET
Datasheet	FDME910PZT-FairchildSemiconductor.pdf

FDME910PZT Product details

Description

This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

Features

Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A.
Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A.
Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A.
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin.
HBM ESD protection level > 2 kV typical (Note 3).
Free from halogenated compounds and antimony oxides.
RoHS Compliant February 2015 General.

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Published: Jan 10, 2017 |