FDME910PZT - MOSFET
FDME910PZT Features
* Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
* Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
* Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
* HBM ESD protection level > 2 kV typical
