FDME910PZT MOSFET

Fairchild Semiconductor

Description

FDME910PZT P-Channel PowerTrench® MOSFET FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24 mΩ .
This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

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Datasheet Specifications

Part number: FDME910PZT
Manufacturer: Fairchild Semiconductor
File Size: 181.48 KB
Datasheet: FDME910PZT-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
* Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
* Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
* HBM ESD protection level > 2 kV typical

FDME910PZT Distributors

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FDME910PZT MOSFET Fairchild Semiconductor

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