FDME910PZT Datasheet, Mosfet, Fairchild Semiconductor

FDME910PZT Features

• Mosfet
• Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
• Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
• Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
• Low

PDF File Details

Part number:

FDME910PZT

Manufacturer:

Fairchild Semiconductor

File Size:

181.48kb

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📄 Datasheet

Description:

Mosfet. This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.

FDME910PZT Application

• Applications It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 1.6x1.6 Thin package offers exc

TAGS

FDME910PZT

Fairchild Semiconductor

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