FDME820NZT N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, POWERTRENCH) 20 V, 9 A, 18 mohm FDME820NZT General .
This Single N. Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.

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Datasheet Specifications

Part number: FDME820NZT
Manufacturer: ON Semiconductor ↗
File Size: 298.93 KB
Datasheet: FDME820NZT-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
* Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A
* Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A
* Low Profile
* 0.55 mm maximum
* in the New Package MicroFET 1.6x1.6 Thin
* HBM ESD Protection Level

Applications

* Li
* lon Battery Pack
* Baseband Switch
* Load Switch
* DC
* DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±12 V ID Drain Cur

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FDME820NZT N-Channel MOSFET ON Semiconductor

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