FDME820NZT - N-Channel MOSFET

ON Semiconductor

FDME820NZT Datasheet Preview — Preview of FDME820NZT PDF

Datasheet Details

Part number	FDME820NZT
Manufacturer	ON Semiconductor ↗
File Size	298.93 KB
Description	N-Channel MOSFET
Datasheet	FDME820NZT-ONSemiconductor.pdf

FDME820NZT Product details

Description

This Single N Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe.

Features

Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A.
Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A.
Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A.
Low Profile.
0.55 mm maximum.
in the New Package MicroFET 1.6x1.6 Thin.
HBM ESD Protection Level > 2.5 kV (Note 3).
Free from Halogenated Compounds and Antimony Oxides.
RoHS Compliant.

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Published: Dec 20, 2023 |