FDP16N50 - N-Channel MOSFET

Fairchild Semiconductor

FDP16N50 Datasheet Preview — Preview of FDP16N50 PDF

Datasheet Details

Part number	FDP16N50
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.00 MB
Description	N-Channel MOSFET
Datasheet	FDP16N50_FairchildSemiconductor.pdf

FDP16N50 Product details

Description

TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficient switched mode power supplies and active power factor correction.D G G DS TO-220 FDP Series TO-220F GD S

Features

16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V.
Low gate charge ( typical 32 nC).
Low Crss ( typical 20 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability UniFET.

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Published: May 3, 2007 |