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FDP65N06 N-Channel MOSFET

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Description

FDP65N06 * N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ .
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

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Features

* RDS(on) = 13 mΩ (Typ. ) @ VGS = 10 V, ID = 32.5 A
* Low Gate Charge ( typical 33 nC)
* Low Crss ( typical 35 pF)
* Fast Switching

Applications

* such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Conti

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