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FDS89161 Dual N-Channel MOSFET

FDS89161 Description

FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.
Shielded Gate MOSFET Technology. Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2. Max rDS(on) = 171 mΩ at VGS = 6 V, ID =.

FDS89161 Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gat

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