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FDS89161

Dual N-Channel MOSFET

FDS89161 Features

* General Description

* Shielded Gate MOSFET Technology

* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability

FDS89161 General Description



* Shielded Gate MOSFET Technology

* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used sur.

FDS89161 Datasheet (302.58 KB)

Preview of FDS89161 PDF

Datasheet Details

Part number:

FDS89161

Manufacturer:

Fairchild Semiconductor

File Size:

302.58 KB

Description:

Dual n-channel mosfet.
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

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TAGS

FDS89161 Dual N-Channel MOSFET Fairchild Semiconductor

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