FDS89141 Dual N-Channel MOSFET

Fairchild Semiconductor

Description

FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .
Shielded Gate MOSFET Technology. Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3. Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.

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Datasheet Specifications

Part number: FDS89141
Manufacturer: Fairchild Semiconductor
File Size: 282.96 KB
Datasheet: FDS89141_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Applications

* Synchronous Rectifier
* Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gat

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FDS89141 Dual N-Channel MOSFET Fairchild Semiconductor

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