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FDS89141 Datasheet - Fairchild Semiconductor

FDS89141 Dual N-Channel MOSFET

* Shielded Gate MOSFET Technology * Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A * Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surf.

FDS89141_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDS89141

Manufacturer:

Fairchild Semiconductor

File Size:

282.96 KB

Description:

Dual n-channel mosfet.

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FDS89141 FDS89141 Dual N-Channel MOSFET Fairchild Semiconductor

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