Datasheet4U Logo Datasheet4U.com

FDS89141

Dual N-Channel MOSFET

FDS89141 Features

* General Description

* Shielded Gate MOSFET Technology

* Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A

* Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability

FDS89141 General Description



* Shielded Gate MOSFET Technology

* Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A

* Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability in a widely used surf.

FDS89141 Datasheet (282.96 KB)

Preview of FDS89141 PDF

Datasheet Details

Part number:

FDS89141

Manufacturer:

Fairchild Semiconductor

File Size:

282.96 KB

Description:

Dual n-channel mosfet.
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .

📁 Related Datasheet

FDS89161 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

FDS89161LZ - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

FDS8926A - Dual N-Channel MOSFET (Fairchild Semiconductor)
February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect.

FDS8928A - Dual-Channel MOSFET (Fairchild Semiconductor)
July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode powe.

FDS8934A - Dual P-Channel MOSFET (Fairchild Semiconductor)
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect tran.

FDS8935 - MOSFET (Fairchild Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Descrip.

FDS8935 - Dual P-Channel MOSFET (ON Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features „ Max rDS(on) = 183 mΩ at VGS =.

FDS8936A - Dual N-Channel MOSFET (Fairchild Semiconductor)
May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect tran.

TAGS

FDS89141 Dual N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDS89141 Datasheet Preview Page 2 FDS89141 Datasheet Preview Page 3

FDS89141 Distributor