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FDS89141 - Dual N-Channel MOSFET

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Part number FDS89141
Manufacturer Fairchild Semiconductor
File Size 282.96 KB
Description Dual N-Channel MOSFET
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Description

Shielded Gate MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate te

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