FDS8935

Dual P-Channel MOSFET

ON Semiconductor

FDS8935 Features

* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A General Description

* This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance an

FDS8935 General Description

* This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability .

FDS8935 Datasheet (271.60 KB)

FDS8935 Datasheet Preview — Preview of FDS8935 PDF

Datasheet Details

Part number:

FDS8935

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ON Semiconductor ↗

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271.60 KB

Description:

Dual p-channel mosfet.

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FDS8935 Dual P-Channel MOSFET ON Semiconductor

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FDS8935 Features

FDS8935 General Description

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