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FDS8935 Dual P-Channel MOSFET

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Description

FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ .
This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching perf.

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Features

* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

Applications

* Load Switch
* Synchronous Rectifier D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 55 D2 66 Q2 D1 77 Q1 D1 88 44 G2 33 S2 22 G1 11 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volt

FDS8935 Distributors

📁 Related Datasheet

FDS8934A FDS8936A FDS8936S FDS89141 FDS89161 FDS89161LZ

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FDS8935 Dual P-Channel MOSFET ON Semiconductor
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