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FDS8934A

Dual P-Channel MOSFET

FDS8934A Features

* -4 A , -20 V, RDS(ON) = 0.055 Ω @ VGS = -4.5 V, RDS(ON) = 0.072 Ω @ VGS = -2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SO

FDS8934A General Description

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

FDS8934A Datasheet (417.45 KB)

Preview of FDS8934A PDF

Datasheet Details

Part number:

FDS8934A

Manufacturer:

Fairchild Semiconductor

File Size:

417.45 KB

Description:

Dual p-channel mosfet.

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FDS8934A Dual P-Channel MOSFET Fairchild Semiconductor

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