Datasheet4U Logo Datasheet4U.com

FDS8936A

Dual N-Channel MOSFET

FDS8936A Features

* 6 A, 30 V. R DS(ON) = 0.028 Ω @ VGS = 10 V, RDS(ON) = 0.040 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

FDS8936A General Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

FDS8936A Datasheet (229.32 KB)

Preview of FDS8936A PDF

Datasheet Details

Part number:

FDS8936A

Manufacturer:

Fairchild Semiconductor

File Size:

229.32 KB

Description:

Dual n-channel mosfet.

📁 Related Datasheet

FDS8936S - Dual N-Channel MOSFET (Fairchild Semiconductor)
August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription SO-8 N-Channel enhancement mode power field effect t.

FDS8934A - Dual P-Channel MOSFET (Fairchild Semiconductor)
May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement mode power field effect tran.

FDS8935 - MOSFET (Fairchild Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ November 2010 Features General Descrip.

FDS8935 - Dual P-Channel MOSFET (ON Semiconductor)
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features „ Max rDS(on) = 183 mΩ at VGS =.

FDS89141 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .

FDS89161 - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A, 105.

FDS89161LZ - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

FDS8926A - Dual N-Channel MOSFET (Fairchild Semiconductor)
February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect.

TAGS

FDS8936A Dual N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDS8936A Datasheet Preview Page 2 FDS8936A Datasheet Preview Page 3

FDS8936A Distributor