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FDS8949-F085 Dual N-Channel MOSFET

FDS8949-F085 Description

FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949-F085 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ .
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to mini.

FDS8949-F085 Features

* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* Qualified to AEC Q101
* RoHS compliant General

FDS8949-F085 Applications

* where low in-line power loss and fast switching are required. Applications
* Inverter
* Power suppliers D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Dra

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Dual N-Channel MOSFET ON Semiconductor
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