FDS8949-F085 Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDS8949-F085 Features

* Max rDS(on) = 29mΩ at VGS = 10V

* Max rDS(on) = 36mΩ at VGS = 4.5V

* Low gate charge

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability

* Qualified to AEC Q101

* RoHS compliant General

FDS8949-F085 General Description

These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered app.

FDS8949-F085 Datasheet (461.82 KB)