FDS8926A Dual N-Channel MOSFET

Fairchild Semiconductor

Description

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General .
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDS8926A
Manufacturer: Fairchild Semiconductor
File Size: 201.29 KB
Datasheet: FDS8926A_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount packag

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FDS8926A Dual N-Channel MOSFET Fairchild Semiconductor

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