FDS8926A Datasheet - Fairchild Semiconductor

FDS8926A Dual N-Channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particula.

FDS8926A Features

* 5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount packag

FDS8926A_FairchildSemiconductor.pdf