FDS8926A - Dual N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDS8926A
Manufacturer	Fairchild Semiconductor
File Size	201.29 KB
Description	Dual N-Channel MOSFET
Datasheet	FDS8926A Datasheet
Additional preview pages of the FDS8926A datasheet.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S FD 6A 2 89 S2 G1 SO-8 pin 1 S1 Absolute Maximum Ratings Sy.

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Published: Mar 30, 2005 |