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FDS8978 N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 30 V, 7.5 A, 18 mW FDS8978, FDS8978-F40 General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or convent.

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Features

* rDS(on) = 18 mW, VGS = 10 V, ID = 7.5 A
* rDS(on) = 21 mW, VGS = 4.5 V, ID = 6.9 A
* High Performance Trench Technology for Extremely Low rDS(on)
* Low Gate Charge
* High Power and Current Handling Capability
* 100% Rg Tested
* These Devices

Applications

* DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Continuous (TA = 25°C, 7.5 A Current VGS = 10 V, RqJA = 50°C/W) Continuous (TA = 25°C, 6.9

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDS8978-like datasheet