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FDS8935

MOSFET

FDS8935 Features

* General Description

* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A

* High performance trench technology for extremely low rDS(on)

* This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced Po

FDS8935 General Description



* Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A

* Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A

* High performance trench technology for extremely low rDS(on)

* This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process th.

FDS8935 Datasheet (209.36 KB)

Preview of FDS8935 PDF

Datasheet Details

Part number:

FDS8935

Manufacturer:

Fairchild Semiconductor

File Size:

209.36 KB

Description:

Mosfet.

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FDS8935 MOSFET Fairchild Semiconductor

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