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FDS89161LZ

Dual N-Channel MOSFET

FDS89161LZ Features

* General Description

* Shielded Gate MOSFET Technology

* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced u

FDS89161LZ General Description



* Shielded Gate MOSFET Technology

* Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

* Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A

* High performance trench technology for extremely low rDS(on) This N-Channel logic Level MOSFETs are produced using Fairchild Semico.

FDS89161LZ Datasheet (301.49 KB)

Preview of FDS89161LZ PDF

Datasheet Details

Part number:

FDS89161LZ

Manufacturer:

Fairchild Semiconductor

File Size:

301.49 KB

Description:

Dual n-channel mosfet.
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 2.7 A,.

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FDS89161LZ Dual N-Channel MOSFET Fairchild Semiconductor

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