FDS8958B Dual N & P-Channel Power MOSFET

ON Semiconductor

Description

FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V,.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at.

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Datasheet Specifications

Part number: FDS8958B
Manufacturer: ON Semiconductor ↗
File Size: 698.92 KB
Datasheet: FDS8958B-ONSemiconductor.pdf
Description: Dual N & P-Channel Power MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel
* Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
* Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
* HBM ESD protection level > 3.5 k

Applications

* where low in-line power loss and fast switching are required. Application
* DC-DC Conversion
* BLU and motor drive inverter D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 Q2 D2 5 D2 6 Q1 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS

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FDS8958B Dual P-Channel Power MOSFET ON Semiconductor

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