FDS8958B Datasheet (ON Semiconductor) - Dual N & P-Channel Power MOSFET

FDS8958B, Dual N & P-Channel Power MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.

These devices are well suite d for low

FDS8958B Features

* Q1: N-Channel

* Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A

* Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel

* Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A

* Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A

* HBM ESD protection level > 3.5 k