FDS8958 Dual N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDS8958 October 2004 FDS8958 Dual N & P-Channel PowerTrench® MOSFET General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process.

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Datasheet Specifications

Part number: FDS8958
Manufacturer: Fairchild Semiconductor
File Size: 269.29 KB
Datasheet: FDS8958_FairchildSemiconductor.pdf
Description: Dual N & P-Channel PowerTrench MOSFET

Features

* Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V
* Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2

Applications

* where low in-line power loss and fast switching are required.

FDS8958 Distributors

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FDS8958 Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor

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