FDS8958 Datasheet - Fairchild Semiconductor

FDS8958 Dual N & P-Channel PowerTrench MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for l.

FDS8958 Features

* Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V

* Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2

FDS8958_FairchildSemiconductor.pdf