FDS8949 Dual N-Channel MOSFET

ON Semiconductor

Description

FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V, 6A, 29mΩ .
These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize.

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Datasheet Specifications

Part number: FDS8949
Manufacturer: ON Semiconductor ↗
File Size: 401.14 KB
Datasheet: FDS8949-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

Applications

* where low in-line power loss and fast switching are required. Applications
* Inverter
* Power suppliers D2 D2 D1 D1 SO-8 Pin 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Dr

FDS8949 Distributors

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FDS8949 Dual N-Channel MOSFET ON Semiconductor

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