FDS8947A Datasheet - Fairchild Semiconductor

FDS8947A, Dual P-Channel MOSFET

www.DataSheet4U.com March 1998 FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General .
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Details

Part number:

FDS8947A

Manufacturer:

Fairchild Semiconductor

File Size:

264.44 KB

Description:

Dual P-Channel MOSFET

Features

* -4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-2

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FDS8947A Dual P-Channel MOSFET Fairchild Semiconductor

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