FDS8947A Dual P-Channel MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com March 1998 FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General .
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDS8947A
Manufacturer: Fairchild Semiconductor
File Size: 264.44 KB
Datasheet: FDS8947A_FairchildSemiconductor.pdf
Description: Dual P-Channel MOSFET

Features

* -4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-2

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FDS8947A Dual P-Channel MOSFET Fairchild Semiconductor

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