FDS8947A Datasheet (Fairchild Semiconductor)

FDS8947A, Dual P-Channel MOSFET

SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particula

FDS8947A Features

* -4.0 A, -30 V. RDS(ON) = 0.052Ω @ VGS = -10 V RDS(ON) = 0.080Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-2