FDS8949 Datasheet - Fairchild Semiconductor

FDS8949, Dual N-Channel MOSFET

www.DataSheet4U.com FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET October 2006 FDS8949 Dual N-Channel Logic Level PowerTrench® MOSFET 40V,.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to mi.

Features

* Max rDS(on) = 29mΩ at VGS = 10V
* Max rDS(on) = 36mΩ at VGS = 4.5V
* Low gate charge
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

Applications

* where low in-line power loss and fast switching are required. Applications
* Inverter
* Power suppliers D2 D2 D1 D1 SO-8 Pin 1 S1 G1 G2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Vol

FDS8949_FairchildSemiconductor.pdf